Burn-in sensor circuit for semiconductor memory

摘要

The circuit contains an external voltage sensor unit (70) for reducing and supplying an external voltage according to applied biassing voltage (V bias), while a burn-in signal generator (80) provides a preset level of the burn-in signal. The preset signal level is fed back and a logic threshold voltage reduced, when a preset level of the dropped voltage is higher than the logic threshold voltage. Pref. the circuit contains a MOS capacitor (74) to supply a noise, mixed in the output signal of the external sensor, to the burn-in signal generator.