MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device wherein the dissolving of a problem of uniformity of film quality of a polycrystalline silicon film in a low temperature process, the improvement of annihilation ratio of crystal defect, the improvement of characteristics of a thin film transistor, and the uniforming of characteristics in a substrate are possible. SOLUTION: An amorphous silicon film 12 is doped with fluorine before crystallization of a polycrystalline silicon film 13 not through an oxide film, before an element isolation process, by combining laser annealing with fluorine doping. After that, crystallization of the amorphous silicon film 12 and activation of fluorine are simultaneously performed by laser annealing. Thereby crystal defect in an active layer film 14 is annihilated, and characteristics of film quality is improved as a whole. Hence, the problem of uniformity of film quality of the active layer film 14 is dissolved, and excellent characteristics of a polycrystalline silicon thin film transistor in a low temperature process can be obtained in a large-sized substrate without irregularity.