| 摘要 |
PURPOSE: To provide a light emitting element capable of emitting light from a light emitting surface as well as an electrode used for III-V group compound semiconductor. CONSTITUTION: (1) Within an electrode used for III-V group compound semiconductor represented by an n-type or p-type general formula formed on a sapphire of Gay Alz N (where, x+y+z=1, 0<=x<=1, 0<=y<=1, 0<=z<=1), the n-electrode 7 is formed on a substantially central part on the surface of III-V group compound semiconductor while the p-electrode 6 for the III-V group compound semiconductor is formed on the same surface as if encircling the n-electrode 7, (2) Besides, the III-V group compound semiconductor represented by the n-type general formula formed on the surface of Inx Gay Alz N (where x+y+z=1, 0<=x<=1, 0<=y<=1, 0<=z<=1) as well as the light emitting element using III-V group compound semiconductor electrode represented by (1) is provided. |
