发明名称 |
High-performance thin-film transistor and SRAM memory cell |
摘要 |
A thin-film transistor and SRAM memory cell include thin-film source and drain regions (12, 14) separated by an opening (22) and overlying and insulating layer (11). A thin-film channel layer (16) overlies the thin-film source and drain regions (12, 14) and a portion of the insulating layer (11) exposed by the opening (22). A thin-film gate electrode (20) is positioned in the opening (22) and defines a thin-film channel region (24) in the thin-film channel layer (16). The thin-film gate electrode (20) is separated from the thin-film channel region (24) by a gate dielectric layer (18). The thin-film channel region (24) extends along vertical wall surfaces (26, 28) of the thin-film source and drain regions (12, 14) providing an extended channel length for the thin-film transistor.
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申请公布号 |
US5567958(A) |
申请公布日期 |
1996.10.22 |
申请号 |
US19950452944 |
申请日期 |
1995.05.31 |
申请人 |
MOTOROLA, INC. |
发明人 |
ORLOWSKI, MARIUS;HAYDEN, JAMES D.;NGUYEN, BICH-YEN |
分类号 |
H01L21/336;H01L27/11;H01L29/786;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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