| 摘要 |
<p>PURPOSE: To obtain a laser diode having a stabilized self-aligned structure, three dimensional ohmic contact and superior heat radiation. CONSTITUTION: This laser diode is manufactured as follows. First, a multilayer epitaxial layer, containing an active layer, is formed on a semiconductor substrate 100. Then, a square-shaped ridge is formed on the top surface of the multilayer epitaxial layer. A passivation layer 107 of a prescribed thickness is vapor-deposited on the epitaxial layer. A photoresist is applied to the passivation layer. The photoresist is exposed to a prescribed depth in the vertical direction on the top surface of the ridge. The exposed part of the photoresist is removed. The exposed passivation layer is removed. The photoresist left on both sides of the redge is removed. A current injection layer 109 is formed on the top surface of the structure.</p> |
