发明名称 METALIZING METHOD OF SEMICONDUCTOR DEVICE
摘要 forming insulating film having a contact part on a semiconductor substrate; forming the first metal layer on a lower film exposed to the inner contact part and the contact at a temperature of less than two hundred centigrades; forming a metal plug in th contact part by fusing the first metal layer; forming the second metal layer at front side of the semiconductor substrate where the metal plug is formed; heat processing the second metal layer.
申请公布号 KR960000367(B1) 申请公布日期 1996.01.05
申请号 KR19920013274 申请日期 1992.07.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, CHANG - SOO
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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