发明名称 |
METALIZING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
forming insulating film having a contact part on a semiconductor substrate; forming the first metal layer on a lower film exposed to the inner contact part and the contact at a temperature of less than two hundred centigrades; forming a metal plug in th contact part by fusing the first metal layer; forming the second metal layer at front side of the semiconductor substrate where the metal plug is formed; heat processing the second metal layer.
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申请公布号 |
KR960000367(B1) |
申请公布日期 |
1996.01.05 |
申请号 |
KR19920013274 |
申请日期 |
1992.07.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, CHANG - SOO |
分类号 |
H01L21/28;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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