Method for determining displacement fields in silicon semiconductor

摘要

A method for the contactless determination of particle displacement fields in a solid substance (1) e.g. a silicon semiconductor when subjected to mechanical or thermal stress is used to assess the level of reliability of the semiconductor in a given application. A hologram plate (6) carries a first videocamera (8) image of the unstressed testpiece material (1) which is followed by a second image on the same plate (6) after application of mechanical/thermal loading (F). After stabilisation of the plate (6) by development two reference beams (I, II) from a coherent light source (20) enable a 3D image of the testpiece (1) including the interference fringes indicating the stress distribution via the processors (10).