| 摘要 |
PURPOSE: To obtain P-I characteristic which is substantially linear up to an extremely high optical output by a structure, wherein a resonance cavity has a length such that the optical output is maximized, when the derivative of optical output varies as a function of current passing through a p-n junction. CONSTITUTION: This semiconductor diode laser comprises an n-conductive type buffer layer 11, an n-conductive type first clad layer 2', a first isolation clad layer 2", an active layer 3 having two quantum-well layers 3' isolated by a barrier layer 3", a second isolation clad layer 4", and a p-conductive type second clad layers 4',4". A p-n junction formed between two clad layers can generate coherent electromagnetic radiation in the stripe active regions of the active layer 3, located in a resonance cavity formed on the surfaces 50, 51 beneath a mesa part 12. When a laser 100 has a strip active region of a length L1 of about 450μm, optical output P as a function of a current 1 passing through the p-n junction has a maximum output, when the derivative thereof varies. Consequently, a P-I characteristic which is substantially linear up to an extremely high optical output can be obtained.
|
