| 摘要 |
<p>PURPOSE: To obtain a high melting point metallic silicide of a smooth surface by allowing an amorphous silicon film doped with impurity by in situ method and a high melting point metallic film formed on this to react. CONSTITUTION: An amorphous silicon film 42 doped by an in situ doping method is formed on an insulated film 41 formed on a semiconductor substrate 40. continually, a silicon film 43 which is not doped with impurity is formed on this and a natural oxidized film existing on this film 43 is removed by an RF system. Next, a high melting point metallic film 44 is formed on the film 43 and the high melting point metal and non-impurity silicon at a lower part are solid-reacted by thermal processing and a high melting point metallic silicide film 45 is formed. At this time, the film 43 which is not doped with impurity is almost all exhausted and even if a part remains, impurity is scattered from the amorphous silicon film doped with impurity at a lower part and deformed by a conductive film.</p> |
