Multilayer resist material and pattern forming method using the same.

摘要

Multilayer resist materials contain a lowermost layer (15) having a high resistance to dry etching and made from polymers or copolymers of haloalkylated aromatic vinyl compound possessing a molecular weight and haloalkylation degree sufficient not to cause charging up therein during electron beam exposure. Pattern forming carried out using these materials yields fine resist patterns with a high resistance to dry etching and high accuracy and suitable for the production of semiconductor devices.