发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE: To achieve a semiconductor memory capable of keeping a sufficient precharge and an equalization time for transmitting data at a high speed. CONSTITUTION: Plural I/O line pair (I/O, the inverse of I/O) connected with corresponding bit line pair (BL, the inverse of BL) are divided into a first group of I/O line pairs transmitting data by a first group of selection signals CSL 0, 2,... and a second group of I/O line pairs transmitting data by a second group of selection signals CSL 1, 3,.... And, while one group of the I/O line pairs is transmitting data, the other group of the I/O line pairs is precharged and equalized. Thus, since data transmission can be performed concurrently with precharge, it is possible to keep a sufficient precharge time to speed up the data transmission.</p>
申请公布号 JPH0765579(A) 申请公布日期 1995.03.10
申请号 JP19940189735 申请日期 1994.08.12
申请人 SAMSUNG ELECTRON CO LTD 发明人 RI SHIRETSU;CHIYOU KENJIYUN;KIN MEIKOU
分类号 G11C11/41;G11C7/10;G11C7/18;G11C11/409;G11C11/4096;(IPC1-7):G11C11/409;G11C11/401 主分类号 G11C11/41
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