| 摘要 |
A semiconductor device is of a three-layered structure comprising a first polycrystalline silicon layer (3) which is thick, a second polycrystalline silicon layer (5) which is thinner than the first polycrystalline silicon layer (3), and a metal wiring layer (4). As a result of this three-layered structure, the wiring area of the semiconductor device can be reduced. Moreover, even if the material of the metal wiring layer (4) flows through the second polycrystalline silicon layer in the heat treatment process of the manufacture of the semiconductor device, the thick first polycrystalline silicon layer blocks the flow of the material, with the result that defective wiring is not produced in the semiconductor device. |
