ELECTRON WAVE INTERFERENCE DEVICE

摘要

PURPOSE:To enable control of the number of mode of electron wave transmitted through a channel and control of a length of a stub. CONSTITUTION:Epitaxial films 3a to 3d of semiconductor hetero structure are formed on an ud-GaAs substrate 21 and a first electrode 6 and a second electrode 7 are formed thereon as a split gate. An insulation film 8 is formed thereon, a through-hole 9 is provided to a part thereof and a third electrode 10 is formed on the first electrode 6, which is insulated through an insulation film 8 and is schottky-jointed to epitaxial films 3a to 3d of a semiconductor hetero structure through a through-hole 9. A negative voltage is applied to the first and second electrodes 6, 7 to form a stub 5 and a quantum fine line 3 by a depletion layer 22 and a stub length can be controlled by an applied voltage to the third electrode 10.