发明名称 |
Bipolar transistor with a particular silicon germanium alloy structure |
摘要 |
To eliminate misfit dislocation occurring in a hetero-interface and to provide a bipolar transistor capable of a high speed operation, the bipolar transistor is configured such that the energy band gap is progressively narrowing from part of an emitter layer towards part of a collector layer through a base layer.
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申请公布号 |
US5323031(A) |
申请公布日期 |
1994.06.21 |
申请号 |
US19920853819 |
申请日期 |
1992.03.19 |
申请人 |
HITACHI, LTD. |
发明人 |
SHOJI, KENICHI;FUKAMI, AKIRA;NAGANO, TAKAHIRO |
分类号 |
H01L29/165;H01L21/331;H01L29/161;H01L29/167;H01L29/73;H01L29/737;(IPC1-7):H01L31/072;H01L31/109;H01L27/082;H01L27/102 |
主分类号 |
H01L29/165 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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