发明名称 |
Process for obtaining high barrier Schottky diode and local interconnect |
摘要 |
This invention is a silicon bipolar integrated circuit comprising: a high barrier Schottky diode clamp on a bipolar transistor, the diode clamp comprising a self-aligned PtSi layer on a silicon surface; and a TiN local interconnect partially overlying the PtSi layer. It also is a method of manufacturing an integrated circuit comprising: forming a self-aligned PtSi layer on the adjacent base and collector silicon regions, the PtSi serving as a clamp diode on the bipolar transistor; and forming an etch-patterned TiN layer partially overlying the PtSi layer, the etch-patterned TiN layer serving as local interconnects. The invention provides a PtSi Schottky diode on a bipolar transistor in combination with a TiN local interconnect with the advantages of (i) providing a TiN local interconnect which can be etched without also etching the PtSi, (ii) permitting a wide process window for overetching at contacts, (ii) a TiN local interconnect which is an improvement over a polysilicon local interconnect, and (iv) a high barrier Schottky diode for clamping a bipolar transistor.
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申请公布号 |
US5320971(A) |
申请公布日期 |
1994.06.14 |
申请号 |
US19920908761 |
申请日期 |
1992.07.01 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
EKLUND, ROBERT H.;HAVEMANN, ROBERT H. |
分类号 |
H01L21/768;H01L27/06;(IPC1-7):H01L21/265;H01L21/70 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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