SELECTIVE FORMATION METHOD OF SILICON NITRIDE FILM,申请号JP19920195991-传众专利搜索

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发明名称	SELECTIVE FORMATION METHOD OF SILICON NITRIDE FILM
摘要
申请公布号	JPH0621048(A)	申请公布日期	1994.01.28
申请号	JP19920195991	申请日期	1992.06.30
申请人	NEC CORP	发明人	ISHITANI AKIHIKO
分类号	C23C16/04;C23C16/34;H01L21/318;(IPC1-7):H01L21/318	主分类号	C23C16/04
代理机构		代理人
主权项
地址

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