| 摘要 |
The stacked capacitor of a high integrated MOS memory element is mfd. by (a) forming a field oxide film (2) and a transistor consisting of a gate oxide film (3), a gate electrode and a source/drain on the substrate (1), (b) forming a first oxide film (9), a first polycrystalline silicon (10) and a second oxide film (11) on the whole surface of the substrate, (c) removing the film (11) and the silicon (10), (d) etching the film (9) to form a buried contact, (e) depositing a second polycrystalline silicon (14), defining the storage node and removing the silicon (14) and the film (11), (f) patterning the silicon (10) to be a storage node pattern, (g) forming a dielectric film (16) on the silicons (10,14), and (h) forming a plate polycrystalline silicon (17) on the film (16).
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