EXTRINSIC GETTERING METHOD USING OXYGEN ION IMPLANTATION

摘要

The extrinsic gettering by oxygen implanting on the back surface of wafer is accomplished by ion implanting O+ or O2 etc. on the back surface of wafer, treating at 800 deg.C for 30 minutes in an inert gas atmosphere or an oxidation atmosphere to oxidize the implanted oxygen and to form an oxide defect layer. The process removes the heavy metal ion or the lattice defect in the wafer and makes a purer wafer, and makes the after process easy and accurate.