| 摘要 |
PURPOSE:To realize an increase of capacitance of a capacitor by laminating a memory capacitor of a memory cell and a storage capacitor of an adjacent memory cell. CONSTITUTION:An n<+> diffusion layer-polysilicon electrode contact 7 is shaped on a memory cell n<+> diffusion layer 5 of a digit line 1. A polysilicon electrode 13 is formed thereon across a memory cell of an adjacent digit line 2. A capacitor insulating film 11 is formed on the polysilicon electrode 13 and a capacitor polysilicon 10 is formed thereon. Another capacitor insulating film 11 is formed on the capacitor polysilicon 10. An n<+> diffusion layer-polysilicon electrode contact 8 is shaped, a polysilicon electrode 12 is formed and a storage capacitor is constituted. As a result, a capacitor can be constituted of the polysilicon electrode 13 and the capacitor polysilicon 10, and the polysilicon electrode 12 and the capacitor polysilicon 10. |
