| 摘要 |
PURPOSE:To significantly simplify the manufacturing process for an intermediate silicon plate, and to form via-holes which satisfy the required insulating characteristics in the manufacture of an intermediate plate for interconnection of an assembled multichip module using a ceramic substrate. CONSTITUTION:A silicon substrate 2 is irradiated with a laser beam 3 in an assist gas atmosphere 1 made of oxygen or nitrogen, or the like, so that a via-hole 4 penetrating through the silicon substrate 2 is formed. At the same time, a dielectric film 5 is formed over the inner wall of the via-hole 4. The silicon substrate 2 is used as an intermediate plate 7 for interconnection on which a semiconductor chip 6 is mounted, and the intermediate plate 7 is mounted on a ceramic substrate 8. |
