| 摘要 |
PURPOSE:To acquire a high breakdown strength/low resistance semiconductor device. CONSTITUTION:A triangular groove 10 is provided to an N<->-type semiconductor layer 2 and a gate electrode 5 is formed at an end part thereof. The groove 10 passes through a semiconductor layer 2 and a P-type well region 3 and reaches an N<+>-type source region 4. A source electrode 7 is in contact with the well region 3 and the source region 4 while keeping insulation with the semiconductor layer 2 by an oxide film 9. A drain electrode 8 is connected with the semiconductor layer 2 through an N<+>-type semiconductor substrate 1. When an electric potential of the gate electrode 5 becomes higher than that of the source electrode 7, N-inversion occurs in the well region 3 near the groove 10, a channel is formed to turn ON and much of current flowing the semiconductor layer 2 flows near the groove 10. Even if a pattern is fined, it is possible to keep insulation between electrodes good and to acquire a semiconductor device of low ON resistance with high breakdown strength during OFF time. |
