METALLKONTAKT MIT NIEDRIGEM WIDERSTAND FUER SILIZIUMANORDNUNGEN.

摘要

A three layer metal contact (40) including alu minum is provided for silicon-based semiconductor devices to minimize the effects of formation of silicon precipitates in the aluminum layer and low contact junction leakage. The metal contact comprises a first layer (42) of a refractory metal silicide formed on a silicon surface, an intermediate layer (44) of aluminum formed on the refractory metal silicide and a top layer (46) of a refractory metal silicide formed on the layer of aluminum. Where contact is made to polysilicon layers forming high resistance load resistors, the metal contact of the invention prevents reduction in resistance resulting from the interdiffusion of silicon and aluminum.