Semiconductor switching device using insulated gate bipolar transistors - has delay stage for driver signal supplied to control electrode of one bipolar transistor

摘要

The switching device uses 2 parallel insulated-gate bipolar transistors (A,B), each receiving a driver signal at its control electrode. Both transistors (A,B) are of the same conductivity type, with one having a higher saturation voltage and a shorter fall time than the other and supplied with a delayed driver signal. Pref. the driver signal delay stage uses an input resistor (R) exhibiting a higher resistance value than the input resistance coupled to the control electrode of the other bipolar transistor (A). ADVANTAGE - Reduced switching losses.