| 摘要 |
PURPOSE:To form simply a multilayer wire in a semiconductor device by selectively removing a conductive film having different etching rate from a wiring layer formed on the first wiring layer on a semiconductor substrate as a columnar projection, covering the side periphery of the projection with an insulating film, and connecting the second wiring layer thereto. CONSTITUTION:The first wiring layer 12 of aluminum is formed on a semiconductor substrate 10 having an insulating layer 11, and a wire film and an Mo conductor film 13 made of conductive material having different etching rate from the wire film are covered thereon. with a photoresist film 14 as a mask the first wiring layer and a conductor film are selectively removed. Subsequently, an insulating layer 15 is covered on the entire surface, the photoresist film 14 and the insulating layer 15 formed thereon are removed, and with a new photoresist film 16 as a mask the film 13 is etched to form a columnar projection 13. An insulating layer 17 is formed again in the same thickness as the projection, and the second wiring layer 18 is connected thereon from the projection. Thus, the step of forming a multilayer wire can be simplified, and the disconnection thereof can be prevented. |
