| 摘要 |
<p>PURPOSE:To make the trench width of a V trench for cutting constant, by controlling a V trench forming blade, in the manner in which the cutting depth of the V trench for cutting becomes constant, on the basis of the height distribution of a semiconductor surface. CONSTITUTION:A semiconductor substrate 9 is mounted on a mounting surface 51 of a cutting stand 5, and subjected to vacuum sucking. In this state, the cutting stand 5 is placed in a measuring part 3; the surface height distribution of the substrate 9 in reference to the mounting surface 51 of the mounting stand 5 is measured by a surface height measuring means 31; the measured data are stored in a control part 4. The mounting stand 5 is moved to the inside of a V trench forming part 2, and a V trench 91 for cutting is formed between semiconductor elements on the substrate 9 surface by a V trench forming blade 21. The blade 21 is vertically moved by the control part 4 in accordance with the height distribution, and the cutting depth of the blade 21 is kept constant in reference to the substrate 9 surface. Thereby the V trench 91 whose cutting depth is constant can be formed.</p> |
