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发明名称
Dry etching method
摘要
A dry etching process utilizes a gas to form a side wall protecting layer, which gas has added at least chlorine trifluoride, or in the alternative silicon and fluorine as component.
申请公布号
US5078833(A)
申请公布日期
1992.01.07
申请号
US19900555032
申请日期
1990.07.20
申请人
SONY CORPORATION
发明人
KADOMURA, SHINGO
分类号
H01L21/3065;H01L21/308
主分类号
H01L21/3065
代理机构
代理人
主权项
地址
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