Integrated capacitive press sensor device - has capacitive sensor and capacitive reference element formed side-by-side on common substrate

摘要

The integrated capacitance press sensor device has a polycrystalline semiconductor layer (4) applied to a semiconductor substrate (1) for defining a press sensor cavity (3), with a doped membrane zone within or above the latter. An insulation layer (8) is provided between the polycrystalline semiconductor layer (4) and the semiconductor substrate (1) or a doped semiconductor zone (7) underlying the press sensor cavity, the latter semiconductor zone (7) being insulated from the substrate (1). A capacitive reference element with a similar structure is formed adjacent the sensor element, its polycrystalline semiconductor layer (4) carrying a further layer (10) for increasing its rigidity. ADVANTAGE - Suitable for monolithic integration with further circuit elements.