发明名称 |
Two step process for forming an oxide layer over a stepped surface of semiconductor wafer. |
摘要 |
<p>A two step process is disclosed for forming a silicon oxide layer (40,50) over a stepped surface of a semiconductor wafer (10) while inhibiting the formation of voids in the oxide layer which comprises depositing a layer (40) of an oxide of silicon over a stepped surface of the semiconductor wafer (10) in a CVD chamber by flowing into the chamber a gaseous mixture comprising a source of oxygen, a portion of which comprises O3, and tetraethylorthosilicate as the gaseous source of silicon while maintaining the pressure in the CVD chamber within a range of from about 250 Torr to about 760 Torr and then depositing a second layer (50) of oxide over the first layer (40) in a CVD chamber by flowing into the chamber a gaseous mixture comprising a source of oxygen, a portion of which comprises O3; and tetraethylorthosilicate as the gaseous source of silicon while maintaining the CVD chamber at a lower pressure than during the first deposition step. <IMAGE></p> |
申请公布号 |
EP0440154(A1) |
申请公布日期 |
1991.08.07 |
申请号 |
EP19910101124 |
申请日期 |
1991.01.29 |
申请人 |
APPLIED MATERIALS INC. |
发明人 |
WAI-MAN LEE, PETER;NIN-KOU WANG, DAVID;NAGASHIMA, MAKOTO;FUKUMA, KAZUTO;SATO, TATSUYA |
分类号 |
C23C16/40;H01L21/316;H01L21/768;H01L23/29;H01L23/31;H01L23/532 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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