| 摘要 |
PURPOSE: To provide an additional function for a bipolar transistor, by providing a conductive polycrystalline Si layer above the main body which is insulated from a main surface of the main body and extend to above a main surface region located between both junctions. CONSTITUTION: On a main surface of the main body 16, an insulation material layer e.g. Si dioxide layer 38 is formed, a conductive polysilicon layer 40 is formed thereon, and has a pair of thin and long strips 42 extending along a region of the main surface 18 between a collector-base junction 28 and an emitter-base junction of an emitter region 30. The strips 42 function as a field shield for the emitter-base region and each of them extends to a substantially rectangular region 44 of polysilicon located at one end of the emitter region 30. The region 44 functions as an emitter stabilizing resistance. |
