发明名称 Pressure transducer
摘要 The object of the invention consists of a miniature pressure transducer on the basis of a pressure-dependent resistor structure integrated in silicon, which is permanently protected against mechanical and chemical influences and has the possibility for zero-point and sensitivity monitoring in vivo, without significantly altering the transducer geometry in so doing. The pressure-sensitive semiconductor wafer and a corresponding counter body are embedded in an enveloping body of a highly elastic material, the highly elastic material adhering firmly to the counter body and to the edge regions of the semiconductor wafer, while it rests only loosely in the membrane region. The region of separation between membrane and highly elastic material can be loaded with pressure via a fine channel. Application in the intracorporal pressure measurement in physiological fluids of humans, especially in neurology (measurement of brain pressure) and cardiology (long-term measurements). <IMAGE>
申请公布号 DE3821186(A1) 申请公布日期 1989.07.27
申请号 DE19883821186 申请日期 1988.06.23
申请人 VEB MESSGERAETEWERK ZWOENITZ, DDR 9417 ZWOENITZ, DD 发明人 KUNZE, HANS GERD, DIPL.-PHYS., DDR 9417 ZWOENITZ, DD
分类号 A61B5/0215;A61B5/03;G01L27/00 主分类号 A61B5/0215
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