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发明名称
METHOD FOR FORMING THIN FILM SINGLE CRYSTAL SILICON LAYER
摘要
申请公布号
JPS6425517(A)
申请公布日期
1989.01.27
申请号
JP19870182579
申请日期
1987.07.22
申请人
MATSUSHITA ELECTRON CORP
发明人
MURAKAMI ISAO
分类号
H01L21/20;H01L21/324
主分类号
H01L21/20
代理机构
代理人
主权项
地址
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