| 摘要 |
PURPOSE:To produce an InAs single crystal having scarce defect with high reproducibility by mixing a specified additive with melt of B2O3 used as liquid sealant in the stage of producing a single crystal of InAs by pulling by the LEC process, and adjusting the viscosity of the melt to below a specified value. CONSTITUTION:Melt for producing an InAs single crystal is covered with melt of B2O3 in the stage of producing particularly InAs single crystal among III-V group compound semiconductors by the melt-pulling method, for the purpose of inhibiting evaporation of As (an element constituting the single crystal) from the melt. B2O3 glass prepd. by mixing at least one kind among PbO, Bi2O3, As2O3, and Ga2O3, is used in this stage for the purpose of adjusting the viscosity of the B2O3 melt at just above the m.p. (m.p.-943 deg.C) of InAs to <=230 poise. By this constitution, the growth of the InAs single crystal is performed stably and a single crystal having scarce defect is obtd. with high reproducibility.
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