INTEGRATO DI CONTROLLO PER LO MOSFET DI ALTA POTENZA E CIRCUITO STESSO, PER APPLICAZIONI NELLA COMMUTAZIONE LATO ALTA TENSIONE.

摘要

A lateral conduction high power MOSFET chip with integrated control circuits in disclosed for high-side switching applications. A first surface field reduction region disposed between drain and source regions extends from the chip surface and into its body and has a charge density of about 1x1012 ions/cm2. A second surface field reduction region extends below the first region and the source and drain regions and has a charge density of from about 1.5x1012 to 2.0x1012 ions/cm2. A substrate extends below the second region and is isolated from both drain and source regions to enable the use of the device as a high-side switch.