| 摘要 |
PURPOSE:To make it possible to perform stable activation of an ion implanted layer, when an active layer is formed in a semi-insulating GaAs substrate, by using a GaAs film, which is grown on a substrate, as a protecting film for heat treatment of the ion-implanted layer. CONSTITUTION:Ion implanting mask 2 is formed on a semi-insulating GaAs substrate 1 by using photoresist. Si<+> ions are implanted, and an n-type layer 3 is selectively formed. Thereafter, the mask 2 is removed. A non-doped GaAs film 4 is grown on the entire surface of the substrate. Under the state the surface of the substrate is being covered with the GaAs film 4, heat treatment is performed in an arsine atmosphere, and the implanted impurities in the n-type layer 3 are activated. With the GaAs film as a cap material, dissocation of GaAs in the heat treatment process can be positively prevented. Since the cap material is GaAs, the diffusion of Ga into the cap layer from the substrate can be prevented.
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