| 摘要 |
PURPOSE:To reduce the number of steps and to integrate a Bi-CMOS semiconductor integrated circuit by using a high melting point metal material such as polysilicon as a mask for introducing impurity of an MOS transistor and a bipolar transistor. CONSTITUTION:A polysilicon film 10 is formed on a field oxidized film 8 and a gate oxidized film 9, pattern etching is executed, and with the films, 10, 8 as masks arsenic ions As are implanted to form an N type source region 11, an N type drain 12 of an NMOS transistor, and an N type emitter region 13 and an N type collector contacting region 14 of a bipolar transistor. Then, with the photoresist 15, a field oxidized film 18 and the film 10 as masks boron ions B are implanted, thereby forming a P type source region 16, a P type drain region 17 of a PMOS transistor and a P type base region 18 of a bipolar transistor. |
