摘要 |
PURPOSE:To reduce the fluctuation of a frequency due to ambient temperature change by inserting a P-N junction of a semiconductor to which a resistor is connected in parallel between a control input terminal impressed with a control voltage and an input terminal of an oscillator. CONSTITUTION:The semiconductor to which a resistor 8 is connected in parallel, e.g., the P-N junction of a transistor (TR)7 is inserted between a control input terminal 4a of the voltage controlled oscillator 4 and an input terminal 5a of an oscillating section 5. When a high voltage is impressed to the control input terminal 4a, TRs 6, 7 are both conductive and a voltage dropped by a forward voltage of the TRs 6, 7 less than the voltage of the control input terminal 4a is impressed to an input terminal 5a. The oscillating section 5 is oscillated in a frequency corresponding to the voltage. Even when the ambient temperature is changed in this state, the change in the oscillating frequency due to the change in the capacitance value is compensated by the change in the forward voltage of the TRs 6, 7. |