| 摘要 |
PURPOSE:To control the profile of a metallic film body when a gate or the like is provided by means of dry etching, by adding a desired concentration of oxygen to a metal having a high melting point during the formation of the metallic film on a substrate, and varying the concentration of oxygen in the direction of depth of the film. CONSTITUTION:Mo metal having a high melting point is deposited on an oxide film while O2 is added selectively thereto so as to form an Mo film body 4. The distribution of the O2 concentration is caused to vary in the direction of depth of the film body. When the MO film is selectively dry etched with a mask 5, the portion of the Mo film is which O2 has been introduced is etched at a higher rate than the portion in which no O2 has been introduced. The workability of the Mo film by dry etching can be controlled in this manner, and therefore the profile of the film body also can be controlled precisely. Accordingly, a gate structure having a profile controlled in a high precision can be obtained. |
