发明名称 APPARATUS FOR TREATING COMPOUND SEMICONDUCTOR SINGLE CRYSTAL HAVING HIGH DISSOCIATION PRESSURE
摘要 PURPOSE:To provide the titled treating apparatus composed of a separable sealed vessel for holding the component having high dissociation pressure, a solid or liquid sealant applied to the joint of the separable vessel, and a means for imposing a stress to the joint part, thereby facilitating the balancing of the pressure between the inner and the outer parts of the vessel. CONSTITUTION:The titled apparatus is composed of the upper vessel 1 made of Mo and the lower vessel made of Al2O3. Liquid B2O3 is put into the liquid sealant-holding part 3 of the vessel 2, and the lower end of the upper vessel is dipped into the liquid and made to be contacted with the lower vessel under a proper stress, wherein said vessel 2 is supported elastically with the coil spring 8 having a spring constant to apply the stress of 20-30kg/cm<2> at the contact part. Ga and As are charged in a crucible, GaAs is synthesized directly in the sealed vessel, and the growth of the GaAs single crystal is carried out keeping the pressure of As at a definite level. The breakage of the vessel, the clouding of the optical window 9 and the loss of As before or after the pulling operation can be prevented by this process. For example, graphite can be used as the solid sealant 12.
申请公布号 JPS60255692(A) 申请公布日期 1985.12.17
申请号 JP19840109632 申请日期 1984.05.31
申请人 SHINGIJIYUTSU KAIHATSU JIGIYOUDAN;TOMIZAWA KENJI;SHIMANUKI YASUSHI 发明人 SASA KOUICHI;TOMIZAWA KENJI;SHIMANUKI YASUSHI
分类号 C30B15/00;C30B15/10;C30B29/40;H01L21/02;H01L21/18;H01L21/208 主分类号 C30B15/00
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