Common memory gate non-volatile transistor memory

摘要

A non-volatile semiconductor memory is described incorporating a fixed threshold transistor and a variable threshold transistor in each memory cell. The fixed threshold transistor is used for row selection while the variable threshold transistor stores the data. A common memory gate line throughout the memory permits block erase to one logic state with opposite data being written in on a row-by-row basis. Information is read out from a selected row by a ramp voltage on the memory gate line which is capacitively coupled through variable threshold transistors having a channel in the body below the gate region.