| 摘要 |
PURPOSE:To remove charges induced in the part of a MIS type transistor in an ROM by conventional annealing by a method wherein the adjacent parts of gate oxide films are formed to a thick oxide film having approx. the thickness of a field oxide film. CONSTITUTION:An N<+> diffused region 3 and N<+> diffused regions 41-44 serving as the source and drain of an MNOS type transistor are formed in a P<-> well 2. On the surface of the well, gate oxide films 61-63 are formed by adjacency in the gate region of the MIS type transistor, and thick oxide films 10 of the same thickness as that of the field oxide film 5 are formed at the adjacent parts between these oxide films 61-63. An SiN film 7 is formed on the films 5 and 6, and an electrode wiring metal 8 is formed theron in a required pattern. Such a construction facilitates hydrogen diffusion in the presence of the films 10. |
