| 摘要 |
A resistor having of an insulating substrate bearing a thin layer of the alloy CrSix, where 1</=x</=5 and which layer is doped with nitrogen. The doping may be spread homogeneously throughout the thickness or be concentrated in one or two thickness zones on the outside and/or on the side adjoining the substrate. As a result of the nitrogen doping an improvement of the stability of the resistor is obtained.
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