| 摘要 |
PURPOSE:To achieve the formation of a shallow junction by performing a conductive impurity source implantation after making an Si surface layer amorphous by the implantation of Sn ions. CONSTITUTION:An SiO film is produced in the element isolation region on an Si substrate 1 and next, a gate oxide film 3 and a polycrystalline Si gate 4 are formed. Then, an amorphous layer 8 is formed by implantation of Sn by irradiation with an Sn ion beam 7. Next, the layer 8 is irradiated with a B ion beam 5 to be implanted B. After that, annealing is done in a nitrogen atmosphere to perform recrystallization of an amorphous layer. Then the B is activiated by heat treatment to form a junction region 6'. Consequently, the junction which is shallower than the one that is not subjected to causing into amorphous state and further one that is made to be amorphous by Si ions. |
