| 摘要 |
PURPOSE:To reduce noises due to returning beams by forming a GaInAsP layer having an end wavelength longer than an optical absorption end wavelength of an active layer to either one of the lower section of an InP first clad layer or the upper section of an InP second clad layer when the first clad layer, the active layer, the second clad layer and the like are laminated on an InP substrate and a laser is manufactured. CONSTITUTION:An N type Ga0.31In0.69As0.67P0.33 layer 2, absorption-end energy thereof is 0.92eV, an N type InP clad layer 3, a Ga0.28In0.72As0.61P0.39 active layer 4, to which an impurity is not added and absorption-end energy thereof is 0.95eV, a P type InP clad layer 5 and a P type Ga0.31In0.61As0.67P0.33 layer 6, absorption-end energy thereof is 0.92eV, are laminated on an N type InP substrate 1, and grown in a liquid phase in an epitaxial manner. An Au/ZnP type electrode 8 is applied on the layer 6 through an SiO2 film 7 and an Au/Ge N type electrode 9 on the back of the substrate 1 respectively. |
