MANUFACTURE OF SOLAR CELL

摘要

PURPOSE:To enable the substrate life time to be prevented from decreasing at the time of heat treatment as well as to enable the photo-receiving plane surface recombination rate to be reduce by performing the ion implantation through the substrate surface oxide film layer, thereby enabling the formation of a deep P-N junction in the photo-receiving plane electrode portion and of a shallow P-N junction in the photo-receiving portion, improving the spectral sensitivity of the short wavelength side. CONSTITUTION:In forming P-N junctions in a semiconductor substrate by means of the ion implantation method, the ion implantation is performed through the substrate surface oxide film layer 2 provided on the portion except for the portion for forming a photo-receiving plane electrode 5. For instance, a 100-150Angstrom oxide film 2 is formed on the surface of a P-type silicon substrate 1. Then, an etching resist same as the surface electrode pattern is formed by printing, and the surface electrode forming portion and the reverse side oxide film 2 are removed by means of a HF:H2O=1:10 liquid. Phosphorus ions are implanted into this substrate surface, the oxide film of the photo detector portion is removed by means of the HF:H2O=1:10 liquid, and after printing Al paste, the respective layers of N<+> layer 3-P layer 1-P<+> layer 4 are formed by means of heat treatment. Then, surface and reverse electrodes 5, 6 are formed by means of Ag paste printing and heat treatment, and solder 7 is dipped, thus obtaining a solar cell 8.