| 摘要 |
PURPOSE:To obtain a long-lived a-Si insusceptible of an effect of the material of a substrate and good in photosensitivity characteristics in the side of long wavelengths by forming a specified photoconductive amorphous layer consisting of a 3-layer structure on the substrate. CONSTITUTION:An amorphous layer 102 is formed on a substrate 101 to prepare a photoconductive material 100. The layer 102 is composed of Ge or Ge and Si as a base material optionally contg. H or halogen when needed, and it consists of the first layer 106 at least a part of which crystallizes, the second layer 103 of amorphous Si (a-Si) contg. Ge, and the third photoconductive layer 104 of a- Si. A mark 105 represents a free surface. Further, a distribution of Ge in the second layer 103 is made ununiform in the layer thickness direction, and it has a distribution rich on the side of the substrate 101, and continuously decreasing toward the side of the free surface 105. |
