SOLID-STATE IMAGE PICKUP DEVICE

摘要

PURPOSE:To form an element having a blooming supressing effect with a good reproducibility, by forming a photoelectric converting section at a recess on the surface of a semiconductor substrate. CONSTITUTION:A thickness of a P well 9 under a photodetecting section 1 formed with a P-N junction diode is taken around <4mu and the P well of the other parts is a sufficient thicknessof >8mu. Since the potential 15 of the P well is exceeded when charges are stored in the photodetecting section, the charges flow in the substrate side. Since the P well under a transfer gate electrode 7 is thick, the potential 16 is formed shallowly and no charge of the photodetecting section flows to a channel 5 of a vertical transfer CCD. In order to form the P well under the photodetecting section thinly, the thickness is controlled by etching the P well semiconductor substrate.