| 摘要 |
The array of pixel structure and method of the CMOS image sensor are provided to increase photosensitivity and resolution by extending the distance between the optical detecting devices. The unit pixel array is formed with the lozenge shape in plurality of column and row. The separate signal lines are extended to a plurality of unit column decoders to perform the electrical operation of a plurality of unit pixels. The separate signal lines are extended to a plurality of unit row decoders to perform the electrical operation of a plurality of unit pixels.
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