发明名称 STRUCTURE OF OHMIC ELECTRODE ON GAAS
摘要 PURPOSE:To obtain the ohmic electrode, resistance thereof hardly varies and which is easily joined, by coating GaAs with an AuGe group metal, thermally treating GaAs and laminating a metal having excellent adhesive property, such as Ni, Cr, etc. and Au and Ag. CONSTITUTION:GaAs is coated with AuGe/Ni, AuGe/Pt, AuGe/Ni/Au or the like, and thermally treated, one part is alloyed with GaAs, the surface is coated with the metal having excellent adhesive property, such as Ti, Cr, etc. in 1,000Angstrom thickness or thinner, and Au or Ag is evaporated continuously. According to this constitution, the surface is fine, the bonding strength of connection is also large, and ohmic resistance hardly changes even through treatment at a high temperature.
申请公布号 JPS5840858(A) 申请公布日期 1983.03.09
申请号 JP19810139465 申请日期 1981.09.04
申请人 NIPPON DENKI KK;NIPPON DENSHIN DENWA KOSHA 发明人 SAITOU AKIRA;WADA YOSHIKI
分类号 H01L29/43;H01L21/28;H01L29/45;(IPC1-7):01L29/46 主分类号 H01L29/43
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