| 摘要 |
PURPOSE:To ensure an assured operation while a dynamic memory is precharged, by connecting a discharging and precharging MOSFETs to the source, and input and output sides of the n channel MOSFETs of a pair of inverters respectively. CONSTITUTION:The termial of the other side of an n channel MOSEFT4 is turned into an address signal latching input 35. This input 35 is connected to the drain of a precharging p channel MOSFET36. The input 35 is also turned into a gate input of p channel and n channel MOSFET39 and 41 respectively and at the same connected to the drains of p and n channel MOSFET38 and 40 respectively. These MOSFETs 38, 40 and 39, 41 form the inverter circuits respectively. |
