| 摘要 |
PURPOSE:To prevent breakage of interconnections for an aluminum electrode caused by etching solution by forming a protruded electrode on a polyimide resin layer which is formed on a PSG layer on which an opening is provided over an aluminum electrode. CONSTITUTION:The opening is provided on the PSG layer 4 and the polyimide resin layer 10 which are formed on a semiconductive substrate 1 on which the aluminum electrode 2 has been deposited. Next, after a chromium layer 5, a copper layer 6 and a gold layer 7 are evaporated successively over the whole surface, a thick protrusion of gold 9 is formed by a plating process utilizing photoresist. After this, the chromium, copper and gold layers are removed by etching except those underneath the protrusion. Thus, it can be prevented to break the interconnection on the aluminum electrode during the etching process resulting from pinholes in the PSG layer. |
